creat by art - ideal for printed circuit board - high case dielectric strength - high surge current capability - typical ir less than 0.1ua - ul recognized file # e-326243 - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test v rrm 50 100 200 400 600 800 1000 v v rms 35 70 140 280 420 560 700 v v dc 50 100 200 400 600 800 1000 v i f(av) a i 2 ta 2 s cj pf t j o c t stg o c document number: ds_d1308033 version: g13 weight: 1.54 g (approximately) note 1: pulse test with pw=300 s, 1% duty cycle note 2: measured at 1mhz and applied reverse bias of 4.0v dc 1.1 500 typical junction capacitance per leg (note 2) 215 typical thermal resistance r jl r ja 11 30 o c/w operating junction temperature range - 55 to +150 storage temperature range - 55 to +150 rating of fusing ( t<8.3ms) 26.5 maximum reverse current @ rated vr t j =25 t j =125 i r 10 a peak forward surge current, 8.3 ms single half sine-wave t j = 25 t j = 125 peak forward surge current, 1.0 ms single half sine-wave t j = 25 i fsm 160 100 a t j = 125 v maximum instantaneous forward voltage (note 1) i f = 3 a v f i fsm 80 50 a maximum dc blocking voltage maximum average forward rectified current 3 kbp 306g kbp 307g unit maximum repetitive peak reverse voltage maximum rms voltage maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol kbp 301g kbp 302g kbp 303g kbp 304g kbp 305g mechanical data case: molded plastic body polarity: polarity as marked on the body kbp301g thru kbp307g taiwan semiconductor glass passivated sin g le-phase brid g e rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec kbp
part no. part no. KBP306G KBP306G (ta=25 unless otherwise noted) document number: ds_d1308033 version: g13 description example 25 / tube packing ordering information KBP306G c2 c2 KBP306G c2g c2 g green compound ratings and characteristics curves kbp301g thru kbp307g taiwan semiconductor c2 kbp note 1: "x" defines voltage from 50v (kbp301g) to 1000v (kbp307g) preferred p/n packing code green compound code suffix "g" packing code green compound code package kbp30xg (note 1) 0 1 2 3 4 0 25 50 75 100 125 150 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve 0 20 40 60 80 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum non-repetitive forward surge current 8.3ms single half sine wave (jedec method) 0.1 1 10 100 1000 0 20 40 60 80 100 120 140 instantaneous reverse a current ( a) percent of rated peak reverse voltage (%) fig. 3 typical reverse characteristics tj=25 tj=125 0.1 1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 instantaneous forward current (a) forward voltage (v) fig. 4 typical forward characteristics
min max min max a 10.60 11.68 0.417 0.460 b 0.70 0.90 0.028 0.035 c 3.60 4.10 0.142 0.161 d 12.70 - 0.500 - e 3.70 3.90 0.146 0.154 f 14.22 15.24 0.560 0.600 g 1.27 - 0.050 - p/n = specific device code g = green compound yw = date code f = factory code document number: ds_d1308033 version: g13 kbp301g thru kbp307g taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) marking diagram 10 100 1000 0.1 1 10 100 capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance f=1.0mhz vsig=50mvp-p
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